Conductometric Sensing with Individual InAs Nanowires

Copper (II) Oxide Nanowires for p-type Conductometric NH3 Sensing

Manipulating InAs nanowires with submicrometer precision.

InAs nanowires are grown epitaxially by catalyst-free metal organic vapor phase epitaxy and are subsequently positioned with a lateral accuracy of less than 1 μm using simple adhesion forces between the nanowires and an indium tip. The technique, requiring only an optical microscope, is used to place individual nanowires onto the corner of a cleaved-edge wafer as well as across predefined holes...

Diameter-dependent electron mobility of InAs nanowires.

Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V characterizations, the densities of thermally activated fixed charges and trap states on the surface of untreated (i.e., without any surface functionalization) nanowires are ...

Quantum interference effects in InAs semiconductor nanowires

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Efficient terahertz emission from InAs nanowires

Denis V. Seletskiy,1,4,* Michael P. Hasselbeck,1 Jeffrey G. Cederberg,2 Aaron Katzenmeyer,3 Maria E. Toimil-Molares,3 François Léonard,3 A. Alec Talin,3,† and Mansoor Sheik-Bahae1 1 Department of Physics and Astronomy, University of New Mexico, Albuquerque, NM 87131, USA 2 Sandia National Laboratories, Albuquerque, NM 87185, USA 3 Sandia National Laboratories, Livermore, CA 94551, USA 4 Air For...